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HY1606V - N-Channel Enhancement Mode MOSFET

Download the HY1606V datasheet PDF. This datasheet also covers the HY1606D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

  • 60V/66A, RDS(ON)=10.4 m(typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1606D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1606V
Manufacturer HUAYI
File Size 842.85 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1606V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D U V HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.