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HY1606V Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY1606D/U/V.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications  Power Management for Inverter Systems.

Ordering and Marking Information N-Channel MOSFET D U V HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with RoHS.

HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Key Features

  • 60V/66A, RDS(ON)=10.4 m(typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

HY1606V Distributor