HY1603
Overview
- 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
- 100% EAS Guaranteed
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Halogen - Free Device Available
| Part | HY1603 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | HOOYI |
| Size | 1.11 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| HY1603C2 | HUAYI | N-Channel Enhancement Mode MOSFET |
| HY1607APM | HUAYI | N-Channel MOSFET |
| HY1606D | HUAYI | N-Channel Enhancement Mode MOSFET |
| HY1607APM | HUAYI | N-Channel MOSFET |
| HY1606U | HUAYI | N-Channel Enhancement Mode MOSFET |