HY1603S Overview
Key Features
- 100% EAS Guaranteed
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L
| Part | HY1603S |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | HOOYI |
| Size | 1.11 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| HY1603C2 | HUAYI | N-Channel Enhancement Mode MOSFET |
| HY1607APM | HUAYI | N-Channel MOSFET |
| HY1606D | HUAYI | N-Channel Enhancement Mode MOSFET |
| HY1607APM | HUAYI | N-Channel MOSFET |
| HY1606V | HUAYI | N-Channel Enhancement Mode MOSFET |