• Part: HY1606D
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: HUAYI
  • Size: 842.85 KB
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Datasheet Summary

HY1606D/U/V Features - 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (RoHS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3L Applications - Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant...