HY1606D - N-Channel Enhancement Mode MOSFET

HUAYI

General Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

60V/66A, RDS(ON)=10.4 m(typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

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HY1606D n-channel enhancement mode mosfet by HUAYI - Datasheet Preview

Datasheet Details

Part number	HY1606D
Manufacturer	HUAYI
File Size	842.85 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1606D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D U V HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.