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HY1606AP - N-Channel Enhancement Mode MOSFET

General Description

G D S D Applications G

Power Management for Inverter Systems.

Key Features

  • 60V/60A, RDS(ON)=10.5 mΩ (typ. ) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY1606AP
Manufacturer HOOYI
File Size 788.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1606AP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications G • Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1606A ÿ YYWWJ G P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.