• Part: HY1606AP
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: HOOYI
  • Size: 788.77 KB
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Datasheet Summary

N-Channel Enhancement Mode MOSFET Features - - - - 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS pliant) Pin Description Applications - Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code P HY1606A ÿ YYWWJ G P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for...