HY1606P - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

60V/66A RDS(ON) = 10.4 m(typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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HY1606P n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY1606P
Manufacturer	HOOYI
File Size	622.17 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1606P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P B HY1606 HY1606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.