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HY1606P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY1606P/B N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HY1606P
Manufacturer HOOYI
File Size 622.17 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1606P-HOOYI.pdf

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems.

Ordering and Marking Information N-Channel MOSFET P B HY1606 HY1606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with RoHS.

HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Key Features

  • 60V/66A RDS(ON) = 10.4 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

HY1606P Distributor