Datasheet Summary
HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
- 60V/66A
RDS(ON) = 10.4 m(typ.) @ VGS=10V
- 100% avalanche tested
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Pin Description
DS G TO-220FB-3L
G DS TO-263-2L
Applications
- Switching application
- Power Management for Inverter Systems.
Ordering and Marking Information
N-Channel MOSFET
HY1606 HY1606
YYXXXJWW G YYXXXJWW G
Package Code P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with RoHS. HUAYI...
