HY1320P Datasheet | HOOYI

HY1320P/B N-Channel Enhancement Mode MOSFET Features - 200V/30 A RDS(ON) = 63 mΩ (typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (RoHS pliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications - Switching application - Power Management for Inverter Systems. G N-Channel MOSFET Ordering and Marking Information PB HY1320 HY1320 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with RoHS....