• Part: HY1001P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.02 MB
Download HY1001P Datasheet PDF
HOOYI
HY1001P
HY1001P is N-Channel Enhancement Mode MOSFET manufactured by HOOYI.
- Part of the HY1001M comparator family.
Features - 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) Applications - Power Management for Inverter Systems. TO-220 Ordering and Marking Information N-Channel MOSFET HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 .hooyi-semi. HY1001M/P Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C EAS Avalanche Energy, Single Pulsed L=0.3m H,VD=50V Rating 70 25 175 -55 to 175...