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HY1001P - N-Channel Enhancement Mode MOSFET

Download the HY1001P datasheet PDF. This datasheet also covers the HY1001M variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com

Key Features

  • 70V/75A, RDS(ON)=7.8mΩ (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1001M-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1001P
Manufacturer HOOYI
File Size 1.02 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1001P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Information S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.