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HY1001B - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET Ordering and Marking Information P HY1001 XYMXXXXXX B HY1001 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Not

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Datasheet Details

Part number HY1001B
Manufacturer HUAYI
File Size 843.60 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1001B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1001P/B Feature  70V/80A RDS(ON)= 7.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P HY1001 XYMXXXXXX B HY1001 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.