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HY1001B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY1001P/B Feature  70V/80A RDS(ON)= 7.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS pliant) N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HY1001B
Manufacturer HUAYI
File Size 843.60 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1001B-HUAYI.pdf

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P HY1001 XYMXXXXXX B HY1001 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HY1001B Distributor