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HY1620B - N-Channel Enhancement Mode MOSFET

Download the HY1620B datasheet PDF. This datasheet also covers the HY1620P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 200V/60 A RDS(ON) = 32 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1620P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1620B
Manufacturer HOOYI
File Size 4.24 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1620B Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY1620A N-Channel Enhancement Mode MOSFET
HY1620P N-Channel Enhancement Mode MOSFET
HY1620W N-Channel Enhancement Mode MOSFET
HY1603 N-Channel MOSFET
HY1603D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1620 HY1620 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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