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HY1804S - N-Channel MOSFET

Download the HY1804S datasheet PDF. This datasheet also covers the HY1804 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY1804-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1804S
Manufacturer HOOYI
File Size 879.10 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1804S Datasheet

Full PDF Text Transcription for HY1804S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1804S. For precise diagrams, and layout, please refer to the original PDF.

HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Juncti...

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) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.3mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Rating 40 ±20 175 -55 to 175 80 320** 80 54 62.5 31.2 2

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