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HY3215M - N-Channel Enhancement Mode MOSFET

Download the HY3215M datasheet PDF. This datasheet also covers the HY3215 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY3215-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3215M
Manufacturer HOOYI
File Size 759.00 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3215M Datasheet

Full PDF Text Transcription for HY3215M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY3215M. For precise diagrams, and layout, please refer to the original PDF.

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ M...

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herwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.5 62.5 EAS Avalanche Energy, Single Pulsed L=0.