HY3312B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3312B, a member of the HY3312 N-Channel Enhancement Mode MOSFET family.

HOOYI

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Datasheet Details

Part number	HY3312B
Manufacturer	HOOYI
File Size	760.08 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3312B Datasheet
Additional preview pages of the HY3312B datasheet.

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Full PDF Text Transcription

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HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 130 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 410** 130 93 278 139 0.54 62.5 EAS Avalanche Energy, Single Pulsed L=0.

Published: Aug 19, 2018 |