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HY3312PS - N-Channel Enhancement Mode MOSFET

Download the HY3312PS datasheet PDF. This datasheet also covers the HY3312 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY3312-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3312PS
Manufacturer HOOYI
File Size 760.08 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3312PS Datasheet

Full PDF Text Transcription for HY3312PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY3312PS. For precise diagrams, and layout, please refer to the original PDF.

HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ M...

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herwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 130 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 410** 130 93 278 139 0.54 62.5 EAS Avalanche Energy, Single Pulsed L=0.

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