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HY3606B - N-Channel MOSFET

Download the HY3606B datasheet PDF. This datasheet also covers the HY3606 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

  • 60V/162A RDS(ON) = 3.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3606-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3606B
Manufacturer HOOYI
File Size 3.78 MB
Description N-Channel MOSFET
Datasheet download datasheet HY3606B Datasheet

Full PDF Text Transcription for HY3606B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY3606B. For precise diagrams, and layout, please refer to the original PDF.

HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devi...

View more extracted text
100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3606 HY3606 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.

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