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HY3810B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY3810P/M/B/PS/PM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HY3810B
Manufacturer HOOYI
File Size 939.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY3810B HY3810 Datasheet (PDF)

General Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems.

DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3810 YYXXXJWW G PS HY3810 YYXXXJWW G M HY3810 YYXXXJWW G PM HY3810 YYXXXJWW G B HY3810 YYXXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S M : TO-220FB-3S PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.

HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Key Features

  • 100V/180A RDS(ON) = 5.0 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

HY3810B Distributor