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HY4008M - N-Channel MOSFET

Download the HY4008M datasheet PDF. This datasheet also covers the HY4008P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

  • 80V/200A RDS(ON) = 2.9 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY4008P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY4008M
Manufacturer HOOYI
File Size 4.61 MB
Description N-Channel MOSFET
Datasheet download datasheet HY4008M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY4004B N-Channel Enhancement Mode MOSFET HUAYI
HY4004P N-Channel Enhancement Mode MOSFET HUAYI
HY4145 Single Cell Li+ Battery Gauge HYCON
HY4145-V08000 Single Cell Li+ Battery Gauge HYCON
HY4222 1-to-3 Cell Li Metal Battery Gauge HYCON

Other Datasheets by HOOYI

Part Number Description
HY4008 N-Channel MOSFET
HY4008A N-Channel MOSFET
HY4008B N-Channel MOSFET
HY4008NA2B N-Channel Enhancement Mode MOSFET
HY4008NA2P N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.