Full PDF Text Transcription for HY4306P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY4306P. For precise diagrams, and layout, please refer to the original PDF.
HY4306P/B N-Channel Enhancement Mode MOSFET Features • 60V/230A RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devi...
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100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY4306 HY4306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HY4306P Datasheet
