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HY4306B6 - N-Channel Enhancement Mode MOSFET

General Description

z 60V/290A RDS(ON)= 1.8mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description Pin 7 Pin1 TO-263-6L Pin4 Applications z Switch application z Brushless Motor Drive Ordering and Markin

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Datasheet Details

Part number HY4306B6
Manufacturer HUAYI
File Size 624.15 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY4306B6 Datasheet

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HY4306B6 Feature Description z 60V/290A RDS(ON)= 1.8mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description Pin 7 Pin1 TO-263-6L Pin4 Applications z Switch application z Brushless Motor Drive Ordering and Marking Information B6 HY4306 YYXXXJWW G Pin1 Pin2,3,5,6,7 N-Channel MOSFET Package Code B6:TO-263-6L Date Code YYXXX WW Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.