• Part: HY4306B6
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 624.15 KB
Download HY4306B6 Datasheet PDF
HUAYI
HY4306B6
HY4306B6 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature Description z 60V/290A RDS(ON)= 1.8mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Rugged z Lead Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description Pin 7 Pin1 TO-263-6L Pin4 Applications z Switch application z Brushless Motor Drive Ordering and Marking Information B6 HY4306 YYXXXJWW G Pin1 Pin2,3,5,6,7 N-Channel MOSFET Package Code B6:TO-263-6L Date Code YYXXX WW Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defi nes “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Junction Temperature TSTG Storage Temperature Range Source Current-Continuous(Body Diode) Tc=25°C Mounted on Large Heat Sink Pulsed Drain Current - Tc=25°C Continuous Drain Current Tc=25°C...