HY4306B6
HY4306B6 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature
Description z 60V/290A RDS(ON)= 1.8mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Rugged z Lead Free and Green Devices Available
(Ro HS pliant)
N-Channel Enhancement Mode MOSFET Pin Description
Pin 7 Pin1 TO-263-6L Pin4
Applications z Switch application z Brushless Motor Drive
Ordering and Marking Information
B6
HY4306
YYXXXJWW G
Pin1
Pin2,3,5,6,7 N-Channel MOSFET
Package Code B6:TO-263-6L
Date Code YYXXX WW
Assembly Material G:Lead Free
Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defi nes “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa.
V1.0
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Maximum Junction Temperature
TSTG
Storage Temperature Range
Source Current-Continuous(Body Diode) Tc=25°C
Mounted on Large Heat Sink
Pulsed Drain Current
- Tc=25°C
Continuous Drain Current
Tc=25°C...