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HY4004B - N-Channel Enhancement Mode MOSFET

Download the HY4004B datasheet PDF. This datasheet also covers the HY4004P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

GDS GDS TO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DC Ordering and Marking Information N-Channel MOSFET P B HY4004 HY4004 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lea

Key Features

  • 40V/208A RDS(ON) = 2.5 m(typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY4004P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY4004B
Manufacturer HUAYI
File Size 515.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY4004B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY4004P/B N-Channel Enhancement Mode MOSFET Features • 40V/208A RDS(ON) = 2.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS TO-220FB-3L TO-263-2L Applications • Switching application • Power Management for DC/DC Ordering and Marking Information N-Channel MOSFET P B HY4004 HY4004 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.