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HY4008P - N-Channel MOSFET

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

  • 80V/200A RDS(ON) = 2.9 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY4008P
Manufacturer HOOYI
File Size 4.61 MB
Description N-Channel MOSFET
Datasheet download datasheet HY4008P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.