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HY4004A - N-Channel MOSFET

Download the HY4004A datasheet PDF. This datasheet also covers the HY4004W variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY4004W-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY4004A
Manufacturer HOOYI
File Size 523.17 KB
Description N-Channel MOSFET
Datasheet download datasheet HY4004A Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY4004W N-Channel MOSFET
HY4008 N-Channel MOSFET
HY4008A N-Channel MOSFET
HY4008B N-Channel MOSFET
HY4008M N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 750** 208 138 268 125 0.56 40 EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V 1.