HY4004W
HY4004W is N-Channel MOSFET manufactured by HOOYI.
HY4004W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
40 ±20 175 -55 to 175 208
IDM Pulsed Drain Current
- ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
750-
- 208 138 268 125 0.56 40
EAS Avalanche Energy, Single Pulsed
L=0.5m H
Note
- Repetitive rating ; pulse width limiited by junction temperature
- - Drain current is limited by junction temperature
- -
- VD=32V
1.4-
- -
Electrical Characteristics
(T C
=
25°C
Unless
Otherwise
Noted)
Unit
V °C °C A A A W °C/W
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown...
