• Part: HY4504B6
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 763.53 KB
Download HY4504B6 Datasheet PDF
HUAYI
HY4504B6
HY4504B6 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 40V/322A RDS(ON)= 1.5mΩ(typ.) @VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description Pin7 Pin1 TO-263-6L Applications - Switch application - Brushless Motor Drive - DC-DC - Electric Power Steering Ordering and Marking Information B6 HY4504 YYXXXJWW G Pin4 Pin1 Pin2,3,5,6,7 N-Channel MOSFET Package Code B6:TO-263-6L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi-Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to this pr-oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Junction Temperature TSTG Storage Temperature...