Datasheet4U Logo Datasheet4U.com

HY5012W Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: HOOYI

📥 Download Datasheet

Datasheet Details

Part number HY5012W
Manufacturer HOOYI
File Size 612.26 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5012W Datasheet

General Description

S D G TO-247A-3L S D G TO-3P-3L Applications  Power Management for Inverter Systems.

Ordering and Marking Information N Channel MOSFET W HY5012 YYXXXJWW G A HY5012 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.

HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

Overview

HY5012W/A N-Channel Enhancement Mode MOSFET.

Key Features

  • 125V/300A RDS(ON)=2.9 m  (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

More Datasheets from HOOYI

Part Number Description
HY5012A N-Channel Enhancement Mode MOSFET
HY5204A N-Channel Enhancement Mode MOSFET
HY5204W N-Channel Enhancement Mode MOSFET
HY5608A N-Channel Enhancement Mode MOSFET
HY5608W N-Channel Enhancement Mode MOSFET
HY5N60 600V N-Channel MOSFET