l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche.

Power switch circuit of adaptor and charger. Absolute（ Tc= 25℃ unless otherwise specified） ： Symbol VDSS ID IDM VGS EA.

CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS2N60

CS2N60A23H

CS2N60A3H

CS2N60A4H

CS2N60A4HY

CS2N60A4R

CS2N60A4RZ-G

CS2N60A4T

CS2N60A7H

CS2N60B23HP

CS2N60FA9H

CS2N65A3

CS2N65A3HY