Datasheet Details
| Part number | CS2N60FA9H |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 333.47 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CS2N60FA9H-HuajingMicroelectronics.pdf |
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Overview: Silicon N-Channel Power MOSFET CS2N60F A9H ○R General.
| Part number | CS2N60FA9H |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 333.47 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CS2N60FA9H-HuajingMicroelectronics.pdf |
|
|
|
： VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard..
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