CS2N60A3H datasheet by Huajing Microelectronics.
| Part number | CS2N60A3H |
|---|---|
| Datasheet | CS2N60A3H-HuajingMicroelectronics.pdf |
| File Size | 357.27 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the...
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|---|---|
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| CS2N60A7H | Silicon N-Channel Power MOSFET |
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| CS2N65A3HY | Silicon N-Channel Power MOSFET |
| CS2N65A4HY | Silicon N-Channel Power MOSFET |
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| CS2N70A3R | Silicon N-Channel Power MOSFET |
| CS2N70A3R1-G | Silicon N-Channel Power MOSFET |
