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Silicon N-Channel Power MOSFET CS2N60 A7H
○R
General Description：
VDSS
600 V
CS2N60 A7H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-126F,
which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS2N60A7H Datasheet
