HFF11N60S Overview
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
