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HY3506P Datasheet, HUAYI

HY3506P Datasheet, HUAYI

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HY3506P mosfet equivalent

  • n-channel mosfet.
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HY3506P mosfet equivalent

n-channel mosfet

Datasheet Preview: HY3506P 📥 Download PDF (579.07KB)

PDF file info

PDF file info

Part number: HY3506P

Manufacturer: HUAYI

File Size: 579.07KB

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Description: N-Channel MOSFET

HY3506P Features and benefits

HY3506P Features and benefits


* 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged
* Lead Free and Green Devices Available (RoHS Compliant) Pin D.

HY3506P Application

HY3506P Application


* Switching application
* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOS.

HY3506P Description

HY3506P Description

DS G TO-220FB-3L G DS TO-263-2L Applications
* Switching application
* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P HY3506 YYXXXJWW G B HY3506 YYXXXJWW G Package Code P : TO-220FB-3L Date C.

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TAGS

HY3506P
N-Channel
MOSFET
HUAYI

📁 Related Datasheet

HY3506B - N-Channel MOSFET (HUAYI)
HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY3506W - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Relia.

HY3503 - N-Channel MOSFET (HOOYI)
HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Vo.

HY3503B - N-Channel MOSFET (HOOYI)
HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Vo.

HY3503P - N-Channel MOSFET (HOOYI)
HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Vo.

HY3003 - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003B - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003P - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3007B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

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