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HY3506P N-Channel MOSFET

HY3506P Description

HY3506P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L G DS TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

HY3506P Features

* 60V/190A RDS(ON) = 3.5 m(typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

HY3506P Applications

* Switching application
* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P HY3506 YYXXXJWW G B HY3506 YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products

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Datasheet Details

Part number
HY3506P
Manufacturer
HUAYI
File Size
579.07 KB
Datasheet
HY3506P-HUAYI.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET HUAYI
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