HVV1011-300 Overview
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to...
HVV1011-300 Key Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input and Output Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme