HVV1011-300
HVV1011-300 is Power Transistor manufactured by HVVi.
The innovative Semiconductor pany!
HVV1011-300 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input and Output Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications.
MODE
FREQUENCY (MHz)
VDD (V)
IDQ Power GAIN
(m A)
(W)
(d B)
η IRL (%) (d B)
Class AB
50 100 120 20
45 -8
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50µs and pulse period = 1ms.
VSWR 20:1
DESCRIPTION
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1011-300 Demo Kit Part Number: HVV1011-300-EK Available through Richardson Electronics (http://rfwireless.rell./)...
