Datasheet Details
| Part number | HVV1012-250 |
|---|---|
| Manufacturer | HVVi |
| File Size | 629.33 KB |
| Description | Power Transistor |
| Datasheet | HVV1012-250-HVVi.pdf |
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Overview: The innovative Semiconductor pany! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF.
| Part number | HVV1012-250 |
|---|---|
| Manufacturer | HVVi |
| File Size | 629.33 KB |
| Description | Power Transistor |
| Datasheet | HVV1012-250-HVVi.pdf |
|
|
|
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.
The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
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