HVV1012-250 - Power Transistor

General Description

The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.

Key Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

📥 Download Datasheet

HVV1012-250 power transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV1012-250
Manufacturer	HVVi
File Size	629.33 KB
Description	Power Transistor
Datasheet	HVV1012-250 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HVV1012-060	RF transistor	ASI
HVV1011-035	RF transistor	ASI
HVV1214-025	RF transistor	ASI

Other Datasheets by HVVi

Part Number	Description
HVV1012-060	Power Transistor
HVV1012-100	Power Transistor
HVV1011-035	Power Transistor
HVV1011-300	Power Transistor
HVV1214-025	Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 19.