HVV1011-300 - Power Transistor

Product Overview

Datasheet Details

Part number	HVV1011-300
Manufacturer	HVVi
File Size	771.10 KB
Description	Power Transistor
Datasheet	HVV1011-300 Datasheet
Additional preview pages of the HVV1011-300 datasheet.

Product details

Description

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz.

Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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Published: Aug 11, 2016 |