Datasheet Details
| Part number | HVV1011-300 |
|---|---|
| Manufacturer | HVVi |
| File Size | 771.10 KB |
| Description | Power Transistor |
| Datasheet | HVV1011-300-HVVi.pdf |
|
|
Overview: The innovative Semiconductor pany! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S.
| Part number | HVV1011-300 |
|---|---|
| Manufacturer | HVVi |
| File Size | 771.10 KB |
| Description | Power Transistor |
| Datasheet | HVV1011-300-HVVi.pdf |
|
|
|
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz.
The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
| Part Number | Description |
|---|---|
| HVV1011-035 | Power Transistor |
| HVV1012-060 | Power Transistor |
| HVV1012-100 | Power Transistor |
| HVV1012-250 | Power Transistor |
| HVV1214-025 | Power Transistor |
| HVV1214-025S | RF Transistor |
| HVV1214-075 | RF Transistor |
| HVV1214-100 | Power Transistor |
| HVV0405-175 | Power Transistor |
| HVV0912-150 | Power Transistor |