HVV1011-300 - Power Transistor

General Description

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz.

Key Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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HVV1011-300 power transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV1011-300
Manufacturer	HVVi
File Size	771.10 KB
Description	Power Transistor
Datasheet	HVV1011-300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications.