HVV1012-250
HVV1012-250 is Power Transistor manufactured by HVVi.
The innovative Semiconductor pany!
HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input and Output Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY (MHz)
VDD (V)
IDQ Power GAIN EFFICIENCY IRL
(m A) (W) (d B)
(%) (d B)
Class AB
50 100 250 19.5 48 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 1ms.
DESCRIPTION
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http://rfwireless.rell./)
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit .hvvi. © 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A 12/11/08 1
The innovative Semiconductor...
