HVV1214-025S transistor equivalent, rf transistor.
* High Power Gain
* Excellent Ruggedness
* 48V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-.
operating over the frequency range from 1.2 GHz to 1.4 GHz.
FEATURES
* High Power Gain
* Excellent Ruggedness .
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.
FEATURES
* High Power Gain
* Excellent Rugg.
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