IRF323, IRF320 Datasheet - Harris

IRF323 N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF323 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF320-Harris.pdf

IRF323 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF323, IRF320. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF323, IRF320

Manufacturer:

Harris

File Size:

67.13 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRF323, IRF320.
Please refer to the document for exact specifications by model.

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TAGS

IRF323 IRF320 N-Channel Power MOSFETs Harris

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