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IRF323 - N-Channel Power MOSFETs

Download the IRF323 datasheet PDF. This datasheet also covers the IRF320 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 2.8A and 3.3A, 350V and 400V.
  • rDS(ON) = 1.8Ω and 2.5Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF320-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF323
Manufacturer Harris
File Size 67.13 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF323 Datasheet

📁 Similar Datasheet

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IRF323 N-Channel Power MOSFET Intersil Corporation
IRF320 N-Channel Power MOSFET Samsung semiconductor

Other Datasheets by Harris

Part Number Description
IRF320 N-Channel Power MOSFETs
IRF321 N-Channel Power MOSFETs
IRF322 N-Channel Power MOSFETs
IRF140 N-Channel Power MOSFETs
IRF141 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Features • 2.8A and 3.3A, 350V and 400V • rDS(ON) = 1.8Ω and 2.