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IRF323 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 2.8A and 3.3A, 350V and 400V.
  • rDS(ON) = 1.8Ω and 2.5Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

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More Datasheets from Intersil (now Renesas)

Part Number Description
IRF320 N-Channel Power MOSFET
IRF321 N-Channel Power MOSFET
IRF322 N-Channel Power MOSFET
IRF330 N-Channel Power MOSFET
IRF350 N-Channel Power MOSFET
IRF120 Power MOSFET
IRF121 N-Channel Power MOSFET
IRF122 N-Channel Power MOSFET
IRF123 N-Channel Power MOSFET
IRF130 N-Channel Power MOSFET

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