IRF321
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key Features
- 2.8A and 3.3A, 350V and 400V
- rDS(ON) = 1.8Ω and 2.5Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol
