Datasheet Details
| Part number | IRF320 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.36 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF320-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF320 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.36 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF320-InchangeSemiconductor.pdf |
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·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 400 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.3 A Total Dissipation@TC=25℃ 40 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF320 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0;
ID=250µA VDS= VGS;
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