Kexin Electronics IRF3205
Power MOSFET
| Part No. | IRF3205 |
|---|---|
| Datasheet | IRF3205 Download |
| Manufacturer | Kexin Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated HEXFET Power MOSFET IRF3205 TO-220 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 6.68 ±0.20 15.87 ±0.20 15.80 ±0.20 9.75 ±0.30 (1.00x45°) MAX1.47 0.80 ±0.10 1 23 #1 0.35 ±0.10 2.54TYP [2.54 ±0.20] (30°) 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.50 +0.10 –0.05 2.76 ±0.20 1. GATE 2. DRAIN 3. SOURCEABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current*1 Power Dissipation Linear Derating Factor Linear Derating Factor Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *2 Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol ID ID IDM PD VGS IAR EAR dv/dt RθJC RθCS RθJA TJ.TSTG *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 62A, di/dt...
