IRF3205H Datasheet PDF | Nell Power Semiconductor

Nell Power Semiconductor IRF3205H

IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits.

Part No.	IRF3205H
Datasheet	IRF3205H Download
Manufacturer	Nell Power Semiconductor
Description	N-Channel Power MOSFET
Buy	Stock & Price

DESCRIPTION

The Nell threshold voltage of 4 volts. D D G G D S TO-220AB (IRF3205A) D S

FEATURES

RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) max. 110 75 55 0.010 @ V GS = 10V 150 G (Gate) S (Source)

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage V GS =10V, T C =25°C Continuous Drain Current (Note 1) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 55 55 ±20 110 80 UNIT V V GS =10V, T C =100°C Pulsed Drain current(Note 2) Avalanche current(Note 2) Repetitive avalanche energy(Note 2 ) Peak diode recovery dv/dt(Note 3) Total power dissipat...