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IRF3205A - N-Channel Power MOSFET

Download the IRF3205A datasheet PDF. This datasheet also covers the IRF3205 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max.

threshold voltage of 4 volts.

Key Features

  • RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max. ) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF3205H) D (Drain).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3205-nELL.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Nell Power Semiconductor

Part Number Description
IRF3205 N-Channel Power MOSFET
IRF3205H N-Channel Power MOSFET
IRF3710 N-Channel Power MOSFET
IRF1010 N-Channel Power MOSFET
IRF13N50 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. D D G G D S TO-220AB (IRF3205A) D S FEATURES RDS(ON) = 0.010Ω @ VGS = 10V Ultra low gate charge(150nC max.