Datasheet4U Logo Datasheet4U.com

IRF820 - N-Channel Power MOSFETs

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 2.2A and 2.5A, 450V and 500V.
  • rDS(ON) = 3.0Ω and 4.0Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823.

📥 Download Datasheet

Datasheet Details

Part number IRF820
Manufacturer Harris
File Size 44.37 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF820 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF820 N-Channel Power MOSFET ART CHIP
IRF820 N-Channel MOSFET Transistor Inchange Semiconductor
IRF820 Power MOSFET Motorola Inc
IRF820 N-CHANNEL MOSFET STMicroelectronics
IRF820 N-Channel Power MOSFET Intersil Corporation

Other Datasheets by Harris

Part Number Description
IRF821 N-Channel Power MOSFETs
IRF822 N-Channel Power MOSFETs
IRF823 N-Channel Power MOSFETs
IRF140 N-Channel Power MOSFETs
IRF141 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.