IRF820 datasheet, mosfets equivalent, Harris

datasheet Download (Size : 44.37KB)

IRF820 Features and benefits

* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switchi.

IRF820 Application

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

IRF820 Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power.

Image gallery