| Part Number | IRF820 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various.
d) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 ± 20 2.5 1.6 10 80 0.64 3.5 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( *) Pulse width limited by safe operating area (1. |
IRF820 Datasheet and Specifications PDF
The IRF820 is a N-CHANNEL MOSFET.
| Part Number | IRF820 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | . . |
| Part Number | IRF820 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Part Number | IRF820 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot va.
ebsite：
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF820
*ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; . |