IRF820A Overview
l l Two transistor Forward Half Bridge and Full Bridge Notes through are on page 8 .irf. 1 5/8/00 IRF820A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage...
IRF820A Key Features
- Uninterruptable Power Supply
- High speed power switching
- VDSS 500V RDS(on) max 3.0Ω ID 2.5A Benefits Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective COSS specified (See AN 1001)
- TO-220AB GDS
