Datasheet4U Logo Datasheet4U.com

IRF820APBF - HEXFET Power MOSFET

Key Features

  • 1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB LY L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C Notes:  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 45mH TJ ≤ 150°C RG = 25Ω, IAS = 2.5A. (See Figure 12) max. junction temperature. ( See fig. 11 ).
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF820A Power MOSFET Vishay
IRF820AL Power MOSFET Vishay
IRF820AS Power MOSFET Vishay
IRF820 N-Channel Power MOSFET ART CHIP
IRF820 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF820A Power MOSFET
IRF820AL Power MOSFET
IRF820ALPBF HEXFET Power MOSFET
IRF820AS Power MOSFET
IRF820ASPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94978 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l IRF820APbF HEXFET® Power MOSFET VDSS 500V RDS(on) max 3.0Ω ID 2.5A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l TO-220AB GDS www.DataSheet4U.