IRF820AS Overview
l l Two Transistor Forward Half Bridge and Full Bridge Notes through are on page 8 .irf. 1 5/8/00 IRF820AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage...
IRF820AS Key Features
- Uninterruptable Power Supply
- High speed power switching
- IRF820AS IRF820AL HEXFET® Power MOSFET VDSS 500V RDS(on) max 3.0Ω ID 2.5A Benefits Low Gate Charge Qg Resu
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective COSS specified (See AN 1001)
- D2 Pak IRF820AS TO-262 IRF820AL
