IRF820ASPBF Overview
Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. l l Two Transistor...
IRF820ASPBF Key Features
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free
- HEXFET® Power MOSFET IRF820ASPbF IRF820ALPbF ID 2.5A VDSS 500V RDS(on) max 3.0Ω Benefits Low Gate Charge Q
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective COSS specified (See AN 1001)
- D2 Pak IRF820AS TO-262 IRF820AL
