* 50A, 60V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* +175oC Operating Te.

such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated .

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those.

RF1S50N06

RF1S50N06LESM

RF1S540

RF1S540SM

RF1S22N10SM

RF1S25N06

RF1S25N06SM

RF1S30N06LE

RF1S30N06LESM

RF1S30P05

RF1S30P05SM

RF1S30P06

RF1S30P06SM