RF1S50N06SM - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

This page provides the datasheet information for the RF1S50N06SM, a member of the RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs family.

Product Overview

Harris

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Datasheet Details

Part number	RF1S50N06SM
Manufacturer	Harris
File Size	77.46 KB
Description	Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet	RF1S50N06SM Datasheet
Additional preview pages of the RF1S50N06SM datasheet.

RF1S50N06SM Product details

Description

The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

Features

50A, 60V.
rDS(ON) = 0.022Ω.
Temperature Compensating PSPICE Model.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
+175oC Operating Temperature.

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Published: Dec 23, 2014 |